PRODUCTS - Thermal Management Solutions

By leveraging our core technologies of materials science for refractory metals, Spectra-Mat, Inc. has a full range of products for the thermal management of sophisticated devices, mainly based on GaN and GaAs, where heat generation is localized in small areas: by infiltrating high purity copper into W or Mo, Spectra-Mat, Inc. is able to provide tailored materials in terms of thermal expansion and thermal conductivities to even the most demanding applications. In particular, molybdenum copper (MoCu) is 40% lighter than tungsten copper (WCu), which makes it a superior alternative for weight sensitive applications. Our materials are manufactured starting from very high purity W and Mo powders with no additives, assuring their homogenous metallographic structure and hermeticity.

Spectra-Mat, Inc. can provide tungsten copper and molybdenum copper parts in different shapes and sizes to address different applications needs: we offer small submounts for semiconductor lasers, large bases for GaAs/ GaN power amplifiers and fiber lasers, flanges and carriers for single chip RF and MW GaAs and GaN diodes. Spectra-Mat, Inc. has already recognized the importance of wafer level packaging, especially for cost sensitive applications such as high brightness LEDs: 2’, 3”, 4” and 6” WCu and MoCu wafers are available to meet next generation packaging requirements. Spectra-Mat, Inc. is also working in the addition of a ceramic layer on top of WCu and MoCu material to extend the use of our thermal management materials to other substrates types such as silicon carbide (SiC), sapphire (Al2O3) and silicon (Si).

The main applications of Spectra-Mat, Inc. thermal management materials are:
  • High power semiconductor lasers
  • RF and MW GaAs & GaN diodes and transistors
  • High brightness LEDs
  • Power Electronics (IGBTs, MOSFTEs)
  • MEMS and MOEMS
  • Fiber lasers
  • MMICs
  • GaAs concentrated photovoltaic cells
  • Microprocessors for high end servers
  • Infrared sensors
Application Semiconductor Base Material Spectra-Mat Solution CTE match
(25-400°C average)
Thermal
conductivity, W/m-K
  Semiconductor Laser Diodess        
  Vis, IR Laser diode GaAs W/Cu 90/10 Spacer 6.2 201
  UV Laser diode GaN W/Cu 90/8 Spacer 5.8 188
  Amplifiers        
  RF Amplifier GaAs W/Cu 90/10 Spacer 6.2 201
  HF RF and MW Amplifier GaN W/Cu 90/8 Spacer 5.8 188
  Power Amplifier SiC WCu 94/6 Base 5.5 175
  Power Amplifier SiC WCu 94/6 Base 5.5 175
  RF Amplifier for Aerospace GaAs MoCu 85/15 Base 6.8 154
  MMIC GaAs on Al2O3 WCu 85/15, 80/20, MoCu 85/15 Base 6.2, 6.8 210, 154
  IGBT SiC, Si MoCu 85/15 Flange 6.8 154
  HB LEDs        
  Blue and visible LEDs GaN W/Cu 92/8 Wafer 5.8 188
 

Semiconductor Lasers Diode Spacers/ Submounts

  • Used in direct die attach applications at chip level
  • Ability to use hard solders (e.g. AuSn) for die attach
  • Exceptional flatness and dimensional tolerance control
  • Critical edge quality a specialty
  • Consistently meet stringent surface finish requirements
  • Ability to vary metal matrix density to achieve optimum combination of CTE and TC
  • AuSn metallization available
  • Ability to optimize both CTE and TC

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Microelectronic Bases & Housings for GaAs/ GaN devices

  • Excellent dimensional stability through high temperature processes
  • Isotropic thermal and mechanical properties
  • Precise flatness to your requirements
  • Hermetic
  • Electrolytic and electroless plating available

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WCu/ MoCu submounts, flanges and Carriers for RF GaAs and GaN RF devices

  • Used at chip level for die attach
  • May be used within a Kovar or other material housing for CTE match and thermal dissipation directly from the chip
  • Precision machining allows a variety of configurations
  • Exceptional flatness and dimensional tolerance control
  • Ni and Au plating available

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Special shaped MoCu parts

  • High volume low costs parts for RF and MW GaAs,GaN and Si devices can be supplied in foil or singulated form
  • High volume low costs parts for Si power and IGBT devices can be supplied in foil or singulated form
   

Low Expansion WCu and MoCu Wafers

  • Used in wafer level packaging to create integrated submount during semiconductor process
  • Can create significant packaging cost savings
  • High temperature annealed to maintain flatness during subsequent temperature processing
  • Provided for applications such as: high power laser diodes, high brightness LEDs, concentrated photovoltaics, RF and optoelectronics
  • Substrate diameters offered are 2", 3", 4” and 6”
  • Mo/Cu substrates may be patterned for use in MEMS or MMIC applications
  • Alternative materials offered are pure W and Mo for lower CTE matching

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WCu/MoCu heatspreaders, flanges and bases for optoelectronic applications

  • Excellent dimensional stability through high temperature processes
  • Isotropic thermal and mechanical properties
  • Precise flatness to customer’s requirements
  • Electrolytic and electroless plating available
  • Adds the ability to utilize hard solders
  • Laser marking available

Download Technical Bulletin

   

Brazing/Assemblies

Brazing/Assemblies Spectra-Mat, Inc. has utilized its long-term brazing expertise to expand our product offerings into assemblies for a variety of applications. Whether you require metallized ceramics, Kovar blocks, or other materials brazed to our LEC components, we can accommodate your requirements. Please contact us to discuss your specifications.